Items where Author is "Cheong, K.Y."

Article

Tan, K.S. and Wong, Y.H. and Cheong, K.Y. (2015) Thermal characteristic of sintered Ag-Cu nanopaste for high-temperature die-attach application. International Journal of Thermal Sciences, 87. pp. 169-177. ISSN 1290-0729, DOI https://doi.org/10.1016/j.ijthermalsci.2014.08.022.

Wong, Yew Hoong and Atuchin, V.V. and Kruchinin, V.N. and Cheong, K.Y. (2014) Physical and dispersive optical characteristics of ZrON/Si thin-film system. Applied Physics A, 115 (3). pp. 1069-1072. ISSN 0947-8396, DOI https://doi.org/10.1007/s00339-013-7947-1.

Atuchin, V.V. and Kruchinin, V.N. and Wong, Y.H. and Cheong, K.Y. (2013) Microstructural and optical properties of ZrON/Si thin films. Materials Letters, 105. pp. 72-75. ISSN 0167-577X, DOI https://doi.org/10.1016/j.matlet.2013.03.100.

Wong, Y.H. and Cheong, K.Y. (2013) Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates. Ceramics International, 39 (Spp. 1). S475-S479. ISSN 0272-8842, DOI https://doi.org/10.1016/j.ceramint.2012.10.117.

Wong, Y.H. and Cheong, K.Y. (2013) Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient. Journal of Materials Research, 28 (21). pp. 2985-2989. ISSN 0884-2914, DOI https://doi.org/10.1557/jmr.2013.281.

Wong, Y.H. and Cheong, K.Y. (2012) Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient. Materials Chemistry and Physics, 136 (2-3). pp. 624-637. ISSN 0254-0584, DOI https://doi.org/10.1016/j.matchemphys.2012.07.035.

Wong, Y.H. and Cheong, K.Y. (2012) Formation of Zr- oxynitride thin films on 4H-SiC substrate. Thin Solid Films, 520 (22). pp. 6822-6829. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2012.07.036.

Wong, Y.H. and Cheong, K.Y. (2012) Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient. Electronic Materials Letters, 8 (1). pp. 47-51. ISSN 1738-8090, DOI https://doi.org/10.1007/s13391-011-1067-x.

Wong, Yew Hoong and Cheong, K.Y. (2012) Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate. Journal of The Electrochemical Society, 159 (3). H293-H299. ISSN 0013-4651, DOI https://doi.org/10.1149/2.081203jes .

Wong, Y.H. and Cheong, K.Y. (2011) Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas. Journal of Alloys and Compounds, 509 (35). pp. 8728-8737. ISSN 0925-8388, DOI https://doi.org/10.1016/j.jallcom.2011.06.041.

Kurniawan, T. and Wong, Y.H. and Cheong, K.Y. and Moon, J.H. and Bahng, W. and Razak, K.A. and Lockman, Z. and Kim, H.J. and Kim, N.K. (2011) Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate. Materials Science in Semiconductor Processing, 14 (1). pp. 13-17. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2010.12.011.

Wong, Y.H. and Cheong, K.Y. (2011) Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si. Nanoscale Research Letters, 6 (489). ISSN 1931-7573, DOI https://doi.org/10.1186/1556-276X-6-489.

Wong, Yew Hoong and Cheong, K.Y. (2011) Electrical Characteristics of Oxidized/Nitrided Zr Thin Film on Si. Journal of The Electrochemical Society, 158 (12). H1270-H1278. ISSN 0013-4651, DOI https://doi.org/10.1149/2.106112jes.

Wong, Y.H. and Cheong, K.Y. (2010) ZrO2 thin films on Si substrate. Journal of Materials Science: Materials in Electronics, 21 (10). pp. 980-993. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-010-0144-5.