Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

Wong, Y.H. and Cheong, K.Y. (2011) Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si. Nanoscale Research Letters, 6 (489). ISSN 1931-7573

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Official URL: http://www.nanoscalereslett.com/content/6/1/489

Abstract

The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.

Item Type: Article
Uncontrolled Keywords: Oxidation; Sputtered-Zr; Nitrous oxide; Band alignment; Electrical breakdown field
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 11 Mar 2015 02:07
Last Modified: 11 Mar 2015 02:07
URI: http://eprints.um.edu.my/id/eprint/12996

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