Wong, Y.H. and Cheong, K.Y. (2011) Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si. Nanoscale Research Letters, 6 (489). ISSN 1931-7573, DOI https://doi.org/10.1186/1556-276X-6-489.
Full text not available from this repository.Abstract
The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Oxidation; Sputtered-Zr; Nitrous oxide; Band alignment; Electrical breakdown field |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TJ Mechanical engineering and machinery |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 11 Mar 2015 02:07 |
| Last Modified: | 11 Mar 2015 02:07 |
| URI: | http://eprints.um.edu.my/id/eprint/12996 |
Actions (login required)
 |
View Item |
