Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient

Wong, Y.H. and Cheong, K.Y. (2012) Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient. Electronic Materials Letters, 8 (1). pp. 47-51. ISSN 1738-8090

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Official URL: http://link.springer.com/article/10.1007%2Fs13391-...

Abstract

The effects of oxidation and nitridation temperatures (500–1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric constant of 21.82 and electrical breakdown field of 13.6 MV cm−1 at a current density of 10−6 A cm−2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density of the oxide and the highest barrier height of conduction band offset between the oxide and semiconductor when compared with others.

Item Type: Article
Uncontrolled Keywords: Oxidation; Metal-oxide-semiconductor; Sputtered Zr; Thin film
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 11 Mar 2015 03:24
Last Modified: 11 Mar 2015 03:24
URI: http://eprints.um.edu.my/id/eprint/13003

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