Wong, Y.H. and Cheong, K.Y. (2012) Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient. Electronic Materials Letters, 8 (1). pp. 47-51. ISSN 1738-8090, DOI https://doi.org/10.1007/s13391-011-1067-x.
Full text not available from this repository.Abstract
The effects of oxidation and nitridation temperatures (500–1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric constant of 21.82 and electrical breakdown field of 13.6 MV cm−1 at a current density of 10−6 A cm−2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density of the oxide and the highest barrier height of conduction band offset between the oxide and semiconductor when compared with others.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Oxidation; Metal-oxide-semiconductor; Sputtered Zr; Thin film |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 11 Mar 2015 03:24 |
| Last Modified: | 11 Mar 2015 03:24 |
| URI: | http://eprints.um.edu.my/id/eprint/13003 |
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