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Saroni, A. and Alizadeh, M. and Rahman, S.A. and Dee, C.F. and Goh, B.T. (2017) Composition and optical property controlled in In 2 O 3 /W 2 N nanostructure composites by nitrogen plasma assisted in-situ thermal annealing. Materials Science in Semiconductor Processing, 68. pp. 6-14. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2017.05.030.
Alizadeh, M. and Ganesh, V. and Goh, B.T. and Dee, C.F. and Mohmad, A.R. and Rahman, S.A. (2016) Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation. Applied Surface Science, 378. pp. 150-156. ISSN 0169-4332, DOI https://doi.org/10.1016/j.apsusc.2016.03.174.
Chong, S.K. and Dee, C.F. and Yahya, N. and Rahman, Saadah Abdul (2013) Control growth of silicon nanocolumns' epitaxy on silicon nanowires. Journal of Nanoparticle Research, 15 (4). pp. 1-8. ISSN 1388-0764, DOI https://doi.org/10.1007/s11051-013-1571-z.
Chan, K. and Goh, B.T. and Rahman, S.A. and Muhamad, M.R. and Dee, C.F. and Aspanut, Z. (2012) Annealing effect on the structural and optical properties of embedded au nanoparticles in silicon suboxide films. Vacuum, 86 (9). pp. 1367-1372. ISSN 0042207X, DOI https://doi.org/10.1016/j.vacuum.2012.01.005.
Chan, K.W. and Aspanut, Zarina and Dee, C.F. and Muhamad, M.R. and Rahman, S.A. and Goh, B.T. (2012) Annealing effect on the structural and optical properties of embedded au nanoparticles in silicon suboxide films. Vacuum, 86 (9). pp. 1367-1372. ISSN 0042-207X, DOI https://doi.org/10.1016/j.vacuum.2012.01.005.
Chong, S.K. and Goh, B.T. and Dee, C.F. and Rahman, S.A. (2012) Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique. Materials Chemistry and Physics, 135 (2-3). pp. 635-643. ISSN 0254-0584, DOI https://doi.org/10.1016/j.matchemphys.2012.05.037.
Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique. Thin Solid Films, 519 (15). pp. 4933-4939. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2011.01.056.
Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD). Applied Surface Science, 257 (8). pp. 3320-3324. ISSN 0169-4332, DOI https://doi.org/10.1016/j.apsusc.2010.11.012.
Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Radial growth of slanting-columnar nanocrystalline Si on Si nanowires. Chemical Physics Letters, 515 (1-3). pp. 68-71. ISSN 0009-2614, DOI https://doi.org/10.1016/j.cplett.2011.08.046.
Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Varghese, B. and Sow, C.H. and Dee, C.F. and Rahman, S.A. (2011) Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition. Thin Solid Films, 520 (1). pp. 74-78. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2011.06.042.
Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition. Materials Letters, 65 (15-16). pp. 2452-2454. ISSN 0167-577X, DOI https://doi.org/10.1016/j.matlet.2011.04.100.