Radial growth of slanting-columnar nanocrystalline Si on Si nanowires

Chong, S.K.; Goh, B.T.; Aspanut, Z.; Muhamad, M.R.; Dee, C.F.; Rahman, S.A. (2011) Radial growth of slanting-columnar nanocrystalline Si on Si nanowires. Chemical Physics Letters, 515 (1-3). pp. 68-71. ISSN 0009-2614

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Abstract

The synthesis of Si nanowires was achieved via hot-wire chemical vapor deposition using an indium catalyst. In addition to the axial catalytic growth of Si nanowires, the radial growth of columnar structures occurred on the walls of the nanowires. The HRTEM results revealed that a mixture of amorphous Si and nanocrystalline Si grains was present within the columnar structure. The nanocrystalline Si nanocolumns were slanted at an angle of similar to 66 degrees towards the wall of the NWs. The amorphous Si background in the XRD pattern and asymmetric broadening in the Si peak of the Raman spectra provided evidence for the formation of nanocrystalline Si. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Article
Creators:
  1. Chong, S.K.
  2. Goh, B.T.
  3. Aspanut, Z.
  4. Muhamad, M.R.
  5. Dee, C.F.
  6. Rahman, S.A.(Department of Physics, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA)
Journal or Publication Title: Chemical Physics Letters
Uncontrolled Keywords: chemical-vapor-deposition shell silicon nanowires nanostructures shape kinetics indium
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 09:21
Last Modified: 21 Dec 2014 16:50
URI: http://eprints.um.edu.my/id/eprint/7375

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