Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition

Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Varghese, B. and Sow, C.H. and Dee, C.F. and Rahman, S.A. (2011) Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition. Thin Solid Films, 520 (1). pp. 74-78. ISSN 0040-6090

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Abstract

In this study, the fabrication of Si nanostructures by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition was demonstrated. A high deposition rate of 2.7 nm/s and a high density of silicon nanostructures with a diameter of about 140 nm were obtained at T-s of 250 degrees C. An increase in T-s led to a significant reduction in the size of the nanostructures. However, coalescence on the nanostructures was observed at T-s of 400 degrees C. The Si nanostructures exhibited a highly crystalline structure, which was induced by Au crystallites. The crystallite size and crystallinity of the Si nanostructures amplified with the increase in T. The presence of nanostructures enhanced the surface roughness of the samples and clearly reduced the reflection, especially in the visible region. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Silicon Nanostructures Hot-wire chemical vapor deposition High-resolution transmission electron microscopy Raman spectroscopy X-ray diffraction Optical reflectance metal-induced crystallization substrate-temperature optical-absorption cvd method thin-film growth nanowires hwcvd
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 01:21
Last Modified: 21 Dec 2014 08:51
URI: http://eprints.um.edu.my/id/eprint/7376

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