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Rais, Shamsul Amir Abdul and Hassan, Zainuriah and Abu Bakar, Ahmad Shuhaimi and Abd Rahman, Mohd Nazri and Yusuf, Yusnizam and Taib, Muhamad Ikram Md and Sulaiman, Abdullah Fadil and Hussin, Hayatun Najiha and Ahmad, Mohd Fairus and Norizan, Mohd Natashah and Nagai, Keiji and Akimoto, Yuka and Shoji, Dai (2021) Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11 (3). pp. 926-935. ISSN 2159-3930, DOI https://doi.org/10.1364/OME.413417.
Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Seng, Ooi Chong and Tan, Gary and Anuar, Afiq and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Chanlek, Narong and Abd Majid, Wan Haliza (2021) The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. Journal of Materials Science: Materials in Electronics, 32 (3). pp. 3211-3221. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-020-05070-3.
Hussin, Hayatun Najihah and Talik, Noor Azrina and Abd Rahman, Mohd Nazri and Mahat, Mohd Raqif and Poopalan, Prabakaran and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2021) The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, 121. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2020.105431.
Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Abdul Khudus, Muhammad Imran Mustafa and Anuar, Afiq and Zainorin, Mohamed Zulhakim and Talik, Noor Azrina and Chanlek, Narong and Abd Majid, Wan Haliza (2021) Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD. Journal of Electronic Materials, 50 (4). pp. 2313-2322. ISSN 0361-5235, DOI https://doi.org/10.1007/s11664-021-08768-0.
Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Seng, Ooi Chong and Tan, Gary and Anuar, Afiq and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Chanlek, Narong and Abd Majid, Wan Haliza (2021) The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. Journal of Materials Science: Materials in Electronics, 32 (3). pp. 3211-3221. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-020-05070-3.
Abd Rahman, Mohd Nazri and Yusuf, Yusnizam and Anuar, Afiq and Mahat, Mohamad Raqif and Chanlek, Narong and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Zainal, Norzaini and Abd Majid, Wan Haliza and Shuhaimi, Ahmad (2020) Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 22 (19). pp. 3309-3321. ISSN 1466-8033, DOI https://doi.org/10.1039/d0ce00113a.
Mahat, Mohamad Raqif and Talik, Noor Azrina and Abd Rahman, Mohd Nazri and Anuar, Mohd Afiq and Allif, Kamarul and Azman, Adreen and Nakajima, Hideki and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2020) Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106. p. 104757. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2019.104757.
Mahat, Mohamad Raqif and Talik, Noor Azrina and Abd Rahman, Mohd Nazri and Anuar, Mohd Afiq and Allif, Kamarul and Azman, Adreen and Nakajima, Hideki and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2020) Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2019.104757.
Abd Rahman, Mohd Nazri and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Sulaiman, Abdullah Fadil and Allif, Kamarul and Zahir, Norhilmi Mohd and Shuhaimi, Ahmad (2019) Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm, 21 (12). pp. 2009-2017. ISSN 1466-8033, DOI https://doi.org/10.1039/C9CE00014C.
Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Yusuf, Yusnizam and Li, Hongjian and Sulaiman, Abdullah Fadil and Alif Samsudin, Muhammad Esmed and Zainal, Norzaini and Abdul Khudus, Muhammad Imran Mustafa (2018) Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120. pp. 319-326. ISSN 0749-6036, DOI https://doi.org/10.1016/j.spmi.2018.05.024.
Alias, Norlidah and DeWitt, Dorothy and Siraj, Saedah and Abd Rahman, Mohd Nazri and Gelamdin, Rashidah Begum and Abd Rauf, Rose Amnah (2015) The effectiveness of physics PTechLS module in a rural secondary school in Malaysia. In: International Educational Technology Conference 2015, 27-29 May 2015, Istanbul, Turkey. (Submitted)
