Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Abdul Khudus, Muhammad Imran Mustafa and Anuar, Afiq and Zainorin, Mohamed Zulhakim and Talik, Noor Azrina and Chanlek, Narong and Abd Majid, Wan Haliza (2021) Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD. Journal of Electronic Materials, 50 (4). pp. 2313-2322. ISSN 0361-5235

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Official URL: https://doi.org/10.1007/s11664-021-08768-0

Abstract

A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were studied by varying the aluminium nitride nucleation layer growth temperature at 700°C, 800°C, 900°C, 1000°C and 1100°C, respectively. The compressive strain inside the as-deposited aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was investigated through Raman spectroscopy by focusing on the evolution of E2 (high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. Then, the correlation between luminescence defect and level of foreign impurities respective to the varied nucleation layer growth temperatures were also systematically analysed through photoluminescence spectroscopy and x-ray photoelectron spectroscopy, respectively. © 2021, The Minerals, Metals & Materials Society.

Item Type: Article
Uncontrolled Keywords: Aluminium nitride; induced strain; luminescence defect; MOCVD; oxygen impurities; pulsed atomic-layer epitaxy
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 25 May 2021 02:40
Last Modified: 25 May 2021 02:40
URI: http://eprints.um.edu.my/id/eprint/25973

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