 | Up a level |
Hamzan, Najwa and Goh, Boon Tong and Yeoh, Keat Hoe and Chew, Khian-Hooi (2022) Size-controllable synthesis of 2D Mn3O4 triangular-shaped nanosheets by thermal chemical vapor deposition. Physica E: Low-dimensional Systems and Nanostructures, 142. ISSN 1386-9477, DOI https://doi.org/10.1016/j.physe.2022.115273.
Zhang, Qiaozhen and Chen, Mingzhu and Liu, Huiling and Zhao, Xiangyong and Qin, Xiaomei and Wang, Feifei and Tang, Yanxue and Yeoh, Keat Hoe and Chew, Khian-Hooi and Sun, Xiaojuan (2021) Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices. Materials, 14 (21). ISSN EISSN 1996-1944, DOI https://doi.org/10.3390/ma14216437.
Yeoh, Keat Hoe and Chew, Khian Hooi and Yoon, T.L. and Rusi, - and Chang, Yee Hui Robin and Ong, Duu Sheng (2020) Metal to semiconductor transition of two-dimensional NbSe2 through hydrogen adsorption: A first-principles study. Journal of Applied Physics, 128 (10). p. 105301. ISSN 0021-8979, DOI https://doi.org/10.1063/5.0013866.
Yeoh, Keat Hoe and Chew, Khian Hooi and Yoon, Tiem Leong and Rusi, - and Ong, Duu Sheng (2020) Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects. Journal of Applied Physics, 127 (1). 015305. ISSN 0021-8979, DOI https://doi.org/10.1063/1.5132417.
Yeoh, Keat Hoe and Chew, Khian Hooi and Chu, Y.Z. and Yoon, T.L. and Rusi, - and Ong, D.S. (2019) First-principles study of monolayer Be2C as an anode material for lithium-ion batteries. Journal of Applied Physics, 126 (12). p. 125302. ISSN 0021-8979, DOI https://doi.org/10.1063/1.5110225.
Yeoh, Keat Hoe and Yoon, Tiem Leong and Rusi, - and Ong, Duu Sheng and Lim, Thong Leng (2018) First-principles studies on the superconductivity of aluminene. Applied Surface Science, 445. pp. 161-166. ISSN 0169-4332, DOI https://doi.org/10.1016/j.apsusc.2018.03.133.
Yeoh, Keat Hoe and Chew, Khian-Hooi and Yoon, Tiem Leong and Ong, Duu Sheng and Rusi, - (2021) Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study. In: 4th International Sciences, Technology and Engineering Conference: Exploring Materials for the Future, ISTEC 2020, 8 October 2020, Arau, Virtual.
