Yeoh, Keat Hoe and Chew, Khian Hooi and Yoon, Tiem Leong and Rusi, - and Ong, Duu Sheng (2020) Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects. Journal of Applied Physics, 127 (1). 015305. ISSN 0021-8979, DOI https://doi.org/10.1063/1.5132417.
Full text not available from this repository.Abstract
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34. While the pristine GaN 2D structures are intrinsically semiconducting, the 2D GaN with VGa defects under tensile/compressive biaxial strains is metallic, except at a high compressive strain of 6%. In addition, the 2D GaN exhibits a strain-tunable magnetic property by introducing the VGa defects, where the magnetic moment can be modulated by applying a biaxial strain on the material. A compressive strain larger than 2% tends to suppress the magnetic effect. A drastic reduction of the total magnetization from 2.21 μ B to 0.16 μ B is clearly visible for a lower VGa concentration of θ = 1 / 62. On the other hand, the 2D GaN with VN defects is nonmagnetic, and this behavior is not affected by the biaxial strain. © 2020 Author(s).
| Item Type: | Article |
|---|---|
| Funders: | Data Intensive Computing Centre (DICC), University of Malaya and financial support from MOHE under Grant No. FRGS/1/2017/ STG07/UTAR/02/2, USM Bridging Fund (2018), UM Research (Grant No. GPF041B-2018) |
| Uncontrolled Keywords: | Phosphorus; Electronic properties; Blue phosphorene |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 04 Jun 2020 04:09 |
| Last Modified: | 04 Jun 2020 04:09 |
| URI: | http://eprints.um.edu.my/id/eprint/24654 |
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