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Wang, H.C. and He, Y.T. and Sun, H.Y. and Qiu, Z.R. and Xie, D. and Mei, T. and Tin, C.C. and Feng, Z.C. (2015) Temperature dependence of raman scattering in 4H-SiC films under different growth conditions. Chinese Physics Letters, 32 (4). p. 5. ISSN 0256-307X, DOI https://doi.org/10.1088/0256-307x/32/4/047801.
