Temperature dependence of raman scattering in 4H-SiC films under different growth conditions

Wang, H.C. and He, Y.T. and Sun, H.Y. and Qiu, Z.R. and Xie, D. and Mei, T. and Tin, C.C. and Feng, Z.C. (2015) Temperature dependence of raman scattering in 4H-SiC films under different growth conditions. Chinese Physics Letters, 32 (4). p. 5. ISSN 0256-307X

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Abstract

The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2(TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E-2(TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A(1) (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A(1)(LOPC) mode in 4H-SiC.

Item Type: Article
Additional Information: ISI Document Delivery No.: CF3FH Times Cited: 0 Cited Reference Count: 22 Cited References: Chaldyshev VV, 2002, J ELECTRON MATER, V31, P631, DOI 10.1007/s11664-002-0134-3 Cusco R, 2007, PHYS REV B, V75, DOI 10.1103/PhysRevB.75.165202 Feng ZC, 1996, J ELECTRON MATER, V25, P917, DOI 10.1007/BF02666658 Feng ZC, 2001, J RAMAN SPECTROSC, V32, P840, DOI 10.1002/jrs.765 FUCHS HD, 1991, PHYS REV B, V44, P8633, DOI 10.1103/PhysRevB.44.8633 Han R, 2010, ACTA PHYS SIN-CH ED, V59, P4261 Han R, 2011, APPL PHYS LETT, V99, DOI 10.1063/1.3609009 Han R, 2011, DIAM RELAT MATER, V20, P1282, DOI 10.1016/j.diamond.2011.07.009 HARIMA H, 1995, J APPL PHYS, V78, P1996, DOI 10.1063/1.360174 Koester SJ, 2001, APPL PHYS LETT, V79, P2148, DOI 10.1063/1.1405151 Kong JF, 2007, J PHYS D APPL PHYS, V40, P7471, DOI 10.1088/0022-3727/40/23/032 Li BS, 2011, VACUUM, V86, P452, DOI 10.1016/j.vacuum.2011.09.011 Li WS, 2000, J APPL PHYS, V87, P3332, DOI 10.1063/1.372344 Liu HF, 2006, J APPL PHYS, V99, DOI 10.1063/1.2203393, 10.1063/1.2150259 Nakashima S, 2007, PHYS REV B, V76, DOI 10.1103/PhysRevB.76.245208 Nakashima S, 1997, PHYS STATUS SOLIDI A, V162, P39, DOI 10.1002/1521-396X(199707)162:1<39::AID-PSSA39>3.0.CO;2-L Pu XD, 2005, J APPL PHYS, V98, DOI 10.1063/1.2006208 Song DY, 2006, APPL PHYS LETT, V89, DOI 10.1063/1.2219092 Sun H Y, 2013, OPT EXPRESS, V21 Tin CC, 1996, J CRYST GROWTH, V158, P509, DOI 10.1016/0022-0248(95)00463-7 Wu Y, 2014, APPL PHYS LETT, V104, DOI 10.1063/1.4863437 Zhang XD, 2014, CHINESE PHYS LETT, V31, DOI 10.1088/0256-307X/31/1/016401 Wang Hong-Chao He Yi-Ting Sun Hua-Yang Qiu Zhi-Ren Xie Deng Mei Ting Tin, C. C. Feng Zhe-Chuan National Natural Science Foundation of China 61176085, 11474365, 61377055; Department of Education of Guangdong Province gjhz1103; Open-Project Program of the State Key laboratory of Opto-Electronic Material and Technologies of Sun Yatsen University Supported by the National Natural Science Foundation of China under Grant Nos 61176085, 11474365 and 61377055, the Department of Education of Guangdong Province under Grant No gjhz1103, and the Open-Project Program of the State Key laboratory of Opto-Electronic Material and Technologies of Sun Yatsen University. 0 IOP PUBLISHING LTD BRISTOL CHINESE PHYS LETT
Uncontrolled Keywords: Chemical-Vapor-Deposition, Thin-Films, Epilayers, Nitride, Decay
Subjects: T Technology > T Technology (General)
T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering
Depositing User: Mr Jenal S
Date Deposited: 25 Jul 2015 02:19
Last Modified: 25 Jul 2015 02:19
URI: http://eprints.um.edu.my/id/eprint/13808

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