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Kurniawan, T. and Wong, Y.H. and Cheong, K.Y. and Moon, J.H. and Bahng, W. and Razak, K.A. and Lockman, Z. and Kim, H.J. and Kim, N.K. (2011) Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate. Materials Science in Semiconductor Processing, 14 (1). pp. 13-17. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2010.12.011.
