Electrical and optical characterization of Mg doping in GaN

Azimah, E. and Zainal, N. and Hassan, Z. and Shuhaimi, A. and Bahrin, A. (2013) Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research, 620. pp. 453-457. DOI https://doi.org/10.4028/www.scientific.net/AMR.620.453.


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Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature.

Item Type: Article
Uncontrolled Keywords: Mg doped GaN; PL; I-V; Annealing temperature
Subjects: Q Science > QC Physics
T Technology > T Technology (General)
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Norhamizah Tamizi
Date Deposited: 28 Apr 2014 02:20
Last Modified: 28 Apr 2014 02:20
URI: http://eprints.um.edu.my/id/eprint/9783

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