Preparation and low-temperature sintering of cu nanoparticles for high-power devices

Krishnan, S. and Haseeb, A.S. Md. Abdul and Johan, M.R. (2012) Preparation and low-temperature sintering of cu nanoparticles for high-power devices. IEEE Transactions on Components, Packaging, and Manufacturing Technology, 2 (4). pp. 587-592. ISSN 2156-3950,

Full text not available from this repository.


One of the fundamental requirements for high-temperature electronic packaging is reliable silicon attach with low and stable electrical resistance. This paper presents a study conducted on Cu nanoparticles as an alternative lead-free interconnect material for high-temperature applications. Cu nanoparticles were prepared using pulsed wire evaporation technique in water medium. Pure Cu nanoparticles without any organic mixture were used in this paper. An economical approach to extract the nanoparticles from water was established. In situ Cu nanoparticles oxide reduction was successfully done using forming gas (N-2-5 H-2). Cross-section analysis on bonded interface shows onset of Cu nanoparticles sintering at 400 degrees C. We successfully demonstrated the possibilities of using Cu nanoparticles as silicon die attach material for high-temperature electronic devices.

Item Type: Article
Additional Information: Krishnan, Shutesh Haseeb, A. S. M. A. Johan, Mohd Rafie
Uncontrolled Keywords: cu nanoparticles high-temperature device lead-free low-temperature sintering pulsed wire evaporation spray-pyrolysis wire powders generation morphology explosion
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering
Depositing User: Mr. Mohammed Salim Abd Rahman
Date Deposited: 08 Apr 2013 02:05
Last Modified: 17 Oct 2018 00:51

Actions (login required)

View Item View Item