Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure

Alias, Ezzah Azimah and Taib, Muhamad Ikram Md and Abu Bakar, Ahmad Shuhaimi and Egawa, Takashi and Kent, Anthony J. and Kamil, Wan Maryam Wan Ahmad and Zainal, Norzaini (2021) Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure. Journal of Physical Science, 32 (3). pp. 1-11. ISSN 1675-3402, DOI

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A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium nitride (AlN/GaN) superlattice structure (SLS) in the growth of the LED. The luminescence and the crystalline properties of the LED were discussed. From photoluminescence (PL) surface mapping measurement, the emission wavelength of the LED (453 nm) was almost uniform across the LED epi-wafer area. Temperature-dependent PL revealed that the dominant emission peak of the LED was 2.77 eV at all temperatures. The emission peak was related to the quantum wells of the LED. Some additional peaks were also observed, in particular at lower temperatures. These peaks were associated to alloy fluctuations in the In0.11Ga0.89N/ In0.02Ga0.98N multiquantum wells (MQWs) of the LED. Furthermore, the dependence of PL intensity and PL decay time on temperature revealed the evidence related to indium and/or interface fluctuations of the quantum wells. From X-ray diffraction (XRD) omega-scan measurements, fringes of the AlN/GaN SLS were clear, indicating the SLS were grown with good interface abruptness. However, the fringes for the MQWs were less uniform, indicating another evidence of the alloy fluctuations in the MQWs. XRD-reciprocal surface mapping (RSV) measurement showed that all epitaxial layers of the LED were grown coherently, and the LED was fully under strain.

Item Type: Article
Funders: Ministry of Education Malaysia through the Fundamental Research Grant Scheme [203/CINOR/6711718]
Uncontrolled Keywords: Photoluminescence; X-ray diffraction; Alloy fluctuations
Subjects: Q Science > Q Science (General)
T Technology > T Technology (General)
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms Zaharah Ramly
Date Deposited: 26 Aug 2022 04:03
Last Modified: 26 Aug 2022 04:03

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