An 800 MHz-to-3.3 GHz 20-MHz channel bandwidth WPD CMOS power amplifier for multiband uplink radio transceivers

Mariappan, Selvakumar and Rajendran, Jagadheswaran and Ramiah, Harikrishnan and Mak, Pui-In and Yin, Jun and Martins, Rui P. (2021) An 800 MHz-to-3.3 GHz 20-MHz channel bandwidth WPD CMOS power amplifier for multiband uplink radio transceivers. IEEE Transactions on Circuits and Systems II: Express Briefs, 68 (4). pp. 1178-1182. ISSN 1549-7747, DOI

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This brief describes a novel Wideband Pre-Distortion (WPD) mechanism as a linearization technique for bandwidth-limited CMOS power amplifiers (PAs). The WPD comprises a common-source amplifier and a hybrid feedback mechanism blended with both active and passive networks to secure a flat gain response from 800 MHz till 3.3 GHz, while maintaining >30% power added efficiency (PAE) at a maximum linear output power of 20 dBm throughout the band of operation. The WPD generates unique gain and phase cancellation mechanisms on-chip therefore alleviating the 3(rd)-order intermodulation product (IMD3) for an operating bandwidth of 2.5 GHz. Measurement results on 180 nm CMOS, with a supply voltage of 3.3 V indicate that the WPD-PA produces a saturated output power of 24 dBm, in addition to a power gain of 15.5 dB and a peak efficiency of 35.5% at 2.45 GHz. The WPD-PA delivers a maximum linear output power of 20-dBm with an adjacent channel leakage ratio (ACLR) of -30 dBc and error vector magnitude (EVM) of 3.42%, 2.34% and 2.76% at 0.8, 2.45 and 3.3 GHz when measured with the 20-MHz LTE signal. The corresponding maximum linear PAE ranged between 31 to 34%. The chip area is 1.28 mm(2).

Item Type: Article
Funders: Collaborative Research in Engineering, Science, and Technology (304/PELECT/6050378/C121), Universiti Sains Malaysia (RUI 1001/PCEDEC/8014079), QED Venture, University of Macau (MYRG2018-00244-AMSV), Science and Technology Development Fund, Macau SAR (SKL-AMSV(UM)-2020-2022)
Uncontrolled Keywords: Power amplifiers; Power generation; Wideband; Gain; Capacitance; Transconductance; CMOS; EVM; LTE; linearization; power amplifier (PA); pre-distorter
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering
Depositing User: Ms Zaharah Ramly
Date Deposited: 05 Mar 2022 04:14
Last Modified: 05 Mar 2022 04:14

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