An improved single-phase asymmetrical multilevel inverter structure with reduced number of switches and higher power quality

Maamar, Alla Eddine Toubal and Kermadi, Mostefa and Helaimi, M'hamed and Taleb, Rachid and Mekhilef, Saad (2021) An improved single-phase asymmetrical multilevel inverter structure with reduced number of switches and higher power quality. IEEE Transactions on Circuits and Systems II: Express Briefs, 68 (6). pp. 2092-2096. ISSN 1549-7747, DOI

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This brief proposes an improved single-phase multilevel inverter with asymmetrical structure, consisting of ten unidirectional SiC MOSFET switches and four direct current (DC) voltage sources to produce a twenty-one voltage levels alternating current (AC). The main advantages of the proposed multilevel inverter are the simplicity and the high output power quality. The output power quality is achieved by calculating the switching angles using the half-height (HH) method, thus overcoming the problems associated with total harmonic distortion (THD) and reducing the conduction losses. Furthermore, the switching losses are reduced by using SiC MOSFET's high performance characteristics compared to their Si counterparts. To demonstrate the effectiveness of the proposed 21-level inverter, simulations using MATLAB/SIMULINK and PLECS softwares are carried out. Moreover, an experimental prototype of the inverter controlled by a C2000 Delfino-TMS320F28379D embedded board is realized to validate the results. The results indicates that THD of voltage and current are minimal, 4.2 %, and 0.3 %, respectively. The proposed multilevel inverter can be used for many applications due to its low density, low-cost and conforms to international IEEE-1547 and IEC-61727 standards.

Item Type: Article
Funders: University of Chlef, Algeria, Ministry of Higher Education, Malaysia through Large Research Grant Scheme (LRGS/1/2019/UKM/01/6/3), University of Malaya, Malaysia, through RU-SATU Joint Research 2020 (ST009-2020)
Uncontrolled Keywords: Topology; Switches; Capacitors; Silicon carbide; MOSFET; Through-silicon vias; Switching loss; Power electronic converter; Multilevel inverter; Reduced number of switches; C2000 microcontroller
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 24 Feb 2022 02:38
Last Modified: 24 Feb 2022 02:38

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