Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10

Maged, A.F. and Amin, Y.M. and Durrani, S.A. (1992) Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10. Journal of Materials Science, 27 (20). pp. 5536-5538. ISSN 0022-2461, DOI

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The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak at ∼360 and ∼380 °C for x = 5 and 20, respectively. On the other hand, the material with x=12 showed very little response to gamma radiation, but if the sample was exposed to ultraviolet light (after being glowed of any TL up to 500°C) and then glowed (called phototransfer-thermoluminescence), several peaks appeared at ∼80, 180, 300, and 350°C. The x= 5 and 20 samples did not show any response to ultraviolet light. Because the TL response depended on the ratio of Te/Si, it can be concluded that the TL technique can also be used to characterize semiconductor materials, and it would complement other techniques such as electrical conductivity and differential thermal analysis.

Item Type: Article
Uncontrolled Keywords: Thermoluminescence; Semiconductor materials
Subjects: Q Science > Q Science (General)
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 16 Jan 2015 08:50
Last Modified: 16 Jan 2015 08:50

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