Maged, A.F. and Amin, Y.M. and Durrani, S.A. (1992) Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10. Journal of Materials Science, 27 (20). pp. 5536-5538. ISSN 0022-2461, DOI https://doi.org/10.1007/BF00541618.
Full text not available from this repository.Abstract
The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak at ∼360 and ∼380 °C for x = 5 and 20, respectively. On the other hand, the material with x=12 showed very little response to gamma radiation, but if the sample was exposed to ultraviolet light (after being glowed of any TL up to 500°C) and then glowed (called phototransfer-thermoluminescence), several peaks appeared at ∼80, 180, 300, and 350°C. The x= 5 and 20 samples did not show any response to ultraviolet light. Because the TL response depended on the ratio of Te/Si, it can be concluded that the TL technique can also be used to characterize semiconductor materials, and it would complement other techniques such as electrical conductivity and differential thermal analysis.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Thermoluminescence; Semiconductor materials |
| Subjects: | Q Science > Q Science (General) |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 16 Jan 2015 08:50 |
| Last Modified: | 16 Jan 2015 08:50 |
| URI: | http://eprints.um.edu.my/id/eprint/12159 |
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