Jafar, N. and Soin, N. (2009) Analog and short channel effects performance of sub-100 nm graded channel fully depleted silicon on insulator (SOI). In: Advances in Microelectronics, Nanoelectronics and Optoelectronics, 30 May-1 June 2009, Istanbul, Turkey. (Submitted)
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Abstract
This paper presents the dependency of analog and short channel effects (SCEs) performance of 75 nm channel length fully-depleted Silicon On Insulator (SOI) device on the applied Graded Channel (GC) design. The comparative analysis between standard SOI (STD SOI) devices at doped channel and equivalent threshold voltage, Vth with GC SOI device are examined on the basis of internal physical mechanisms. Device characterizations are performed using simulation based approached provided by ATLAS 2D. Results show superiority of GC performances over standards SOI devices in both analog and SCEs point of views.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Graded Channel Fully Depleted SOI, SOI, analog, Short Channel Effects (SCEs) |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Engineering |
| Depositing User: | Mr. Mohd Samsul Ismail |
| Date Deposited: | 02 Jun 2014 08:16 |
| Last Modified: | 02 Jun 2014 08:16 |
| URI: | http://eprints.um.edu.my/id/eprint/9912 |
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