Wong, Y.H. and Cheong, K.Y. (2013) Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates. Ceramics International, 39 (Spp. 1). S475-S479. ISSN 0272-8842, DOI https://doi.org/10.1016/j.ceramint.2012.10.117.
Full text not available from this repository.Abstract
This work utilizes simultaneous thermal oxidation and nitridation technique to transform sputtered Zr to ZrO2 and to Zr-oxynitride thin films on Si and SiC substrates, respectively, in nitrous oxide gas ambient. Various characterization techniques such as X-ray photoelectron spectroscopy, energy-filtered transmission electron spectroscopy, atomic force microscopy, X-ray diffraction, capacitance–voltage measurements, and leakage current density-electric field measurements were carried out to evaluate and compare the structural, chemical, and electrical properties of the films produced on both Si and SiC substrates.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Thin film; Oxide; D. Nitride |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 11 Mar 2015 04:05 |
| Last Modified: | 11 Mar 2015 04:05 |
| URI: | http://eprints.um.edu.my/id/eprint/13007 |
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