Analog and short channel effects performance of Sub-100 nm graded channel fully depleted silicon on insulator (SOI)

Jafar, N. and Soin, N. (2014) Analog and short channel effects performance of Sub-100 nm graded channel fully depleted silicon on insulator (SOI). In: WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronics, May 30 - June 1 2009, Istanbul, Turkey. (Submitted)

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Abstract

This paper presents the dependency of analog and Short Channel Effects (SCEs) performance of 75 nm channel length fully-depleted Silicon On Insulator (SOI) device on the applied Graded Channel (GC) design. The comparative analysis between standard SOI (STD SOI) devices at doped channel and equivalent threshold voltage, VTH with GC SOI device are examined on the basis of internal physical mechanisms. Device characterizations are performed using simulation based approached provided by ATLAS 2D. Results show superiority of GC performances over standard SOI devices in both analog and SCEs point of views.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering
Depositing User: Mr. Mohd Samsul Ismail
Date Deposited: 29 Oct 2014 00:53
Last Modified: 29 Oct 2014 00:53
URI: http://eprints.um.edu.my/id/eprint/9544

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