Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications

Kumar, N. and Anand, L. (2015) Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications. IET Circuits, Devices and Systems, 9 (4). pp. 283-289. ISSN 1751-858X

[img]
Preview
PDF (Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications)
Broadband_high_performance_laterally_diffused_metal-oxide-semiconductor_power_amplifier.pdf - Published Version

Download (1MB)
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...

Abstract

This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile two-way radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm power. Owing to high output power requirement (similar to 80 W) of mobile radio applications, up to three PA device stages are normally cascaded (pre-driver, driver and final PA stage). The key point in the design of the PA line up concerns the final stage. Here, this paper introduces a design methodology based on parallel-combined impedance matching technique (from theoretical derivation) enables the designers to develop broadband PA with actual PA device impedance (implementation of new generation laterally diffused metal-oxide-semiconductor device). Experimental results demonstrated output power of similar to 80 W and gain of 45 dB, while preserving efficiency of 55 over the bandwidth from 760 to 870 MHz. According to author's knowledge, this amplifier demonstrated highest efficiency with 13 V DC supply (operating at 80 W) in UHF broadband frequency with high gain operation (more than 45 dB) up to date.

Item Type: Article
Additional Information: ISI Document Delivery No.: CM5KX Times Cited: 0 Cited Reference Count: 17 Cited References: Bahl I., 2003, LUMPED ELEMENTS RF M Cripps S. C., 2002, ADV TECHNIQUES RF PO Gaffoor M. R. A., 2002, IEEE T MICROW THEORY, V50, P1445, DOI 10.1109/TMTT.2002.1006405, DOI 10.1109/TMTT.2002.1006405 Green BM, 2001, IEEE T MICROW THEORY, V49, P2486, DOI 10.1109/22.971640 Gruner D, 2010, IEEE T MICROW THEORY, V58, P4022, DOI 10.1109/TMTT.2010.2086469 Kazimierczuk M. K., 2008, RF POWER AMPLIFIERS KAZIMIERCZUK MK, 1992, IEE PROC-B, V139, P387 Kim J, 2010, IEEE T MICROW THEORY, V58, P2340, DOI 10.1109/TMTT.2010.2057790 Kim J., 2011, IEEE J VOLUME SOLID, V46, P133 Kumar N, 2008, IEEE T MICROW THEORY, V56, P604, DOI 10.1109/TMTT.2008.916906 Montrose M. I., 1996, EMC PRINTED CIRCUIT Narendra K, 2009, ELECTRON LETT, V45, P1325, DOI 10.1049/el.2009.1794 Narendra K, 2010, ELECTRON LETT, V46, P1137, DOI 10.1049/el.2010.1396 Narendra K., 2012, IEEE T MICROW THEORY, V3, P604 Williams DF, 2008, IEEE T MICROW THEORY, V56, P565, DOI 10.1109/TMTT.2008.916869 Yarman B. S., 2010, DESIGN ULTRAWIDEBAND Yarman BS, 2014, IEEE T CIRCUITS-I, V61, P1055, DOI 10.1109/TCSI.2013.2285913 Kumar, Narendra Anand, Lokesh Engineering, Faculty /I-7935-2015 Engineering, Faculty /0000-0002-4848-7052 0 INST ENGINEERING TECHNOLOGY-IET HERTFORD IET CIRC DEVICE SYST
Subjects: T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Depositing User: Mr Jenal S
Date Deposited: 02 Mar 2016 06:14
Last Modified: 02 Mar 2016 06:14
URI: http://eprints.um.edu.my/id/eprint/15647

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year