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Number of items: 7.

A

Awais, Muhammad and Ramiah, Harikrishnan and Lim, Chee Cheow and Chuah, Joon Huang (2018) A 0.079 mm2 2.1-to-4.2 GHz ring-VCO employing programmable current topology. Microelectronics International, 35 (2). pp. 85-91. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2017-0003.

Azman, Zulkifli and Nayan, Nafarizal and Megat Hasnan, Megat Muhammad Ikhsan and Othman, Nurafiqah and Bakri, Anis Suhaili and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohamad Hafiz and Mohd Yusop, Mohd Zamri (2021) Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique. Microelectronics International, 38 (3, SI). pp. 86-92. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0013.

B

Bakri, Anis Suhaili and Nayan, Nafarizal and Soon, Chin Fhong and Ahmad, Mohd Khairul and Abu Bakar, Ahmad Shuhaimi and Abd Majid, Wan Haliza and Raship, Nur Amaliyana (2021) Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma. Microelectronics International, 38 (3). pp. 99-104. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0015.

M

Mansor, Mazwan and Syamsul, M. and Yusuf, Yusnizam and Rahman, Mohd Nazri Abdul (2023) Atomic structure for AlN grown on different plane orientation of sapphire via numerical study. Microelectronics International, 40 (1, SI). pp. 46-52. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-04-2022-0065.

O

Othman, Nurul Aida Farhana and Rahman, Sharidya and Wan Muhamad Hatta, Sharifah Fatmadiana and Soin, Norhayati and Benbakhti, Brahim and Duffy, Steven (2019) Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions. Microelectronics International, 36 (2). pp. 73-82. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-09-2018-0057.

S

Samsudin, Muhammad Esmed Alif and Yusuf, Yusnizam and Zainal, Norzaini and Abu Bakar, Ahmad Shuhaimi and Zollner, Christian and Iza, Michael and DenBaars, Steven P. (2021) Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38 (3, SI). pp. 113-118. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0012.

Sangaran, Pragash and Kumar, Narendra and Rajendran, Jagadheswaran and Grebennikov, Andrei (2018) A high gain 10 watts wideband distributed power amplifier for two way radio system. Microelectronics International, 35 (1). pp. 24-32. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-10-2016-0065.

This list was generated on Wed Feb 28 10:45:47 2024 +08.