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Islam, N. and Baharin, M. S. N. S. and Rahim, A. F. A. and Khan, M. F. A. J. and Ghazali, N. A. and Bakar, A. S. A. and Mohamed, M. F. P. (2024) Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices. International Journal of Nanotechnology, 21 (4-5). ISSN 1475-7435, DOI https://doi.org/10.1504/IJNT.2024.141758.
Mazwan, M. and Ng, S. S. and Syamsul, M. and Shuhaimi, A. and Pakhuruddin, M. Z. and Rahim, A. F. A. (2024) Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells. International Journal of Nanotechnology, 21 (4-5). ISSN 1475-7435, DOI https://doi.org/10.1504/IJNT.2024.141765.
Othman, N. A. and Nayan, N. and Mustafa, M. K. and Bakri, A. S. and Azman, Z. and Raship, N. A. and Hasnan, M. M. I. M. and Mamat, M. H. and Yusop, M. Z. M. and Bakar, A. S. A. and Ahmad, M. Y. (2022) Effects of post-annealing on GaN thin films growth using RF magnetron sputtering. International Journal of Nanotechnology, 19 (2-5). pp. 316-326. ISSN 1475-7435, DOI https://doi.org/10.1504/IJNT.2022.124511.
