Items where Author is "Zainal, Norzaini"

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Number of items: 6.


Samsudin, Muhammad Esmed Alif and Yusuf, Yusnizam and Zainal, Norzaini and Abu Bakar, Ahmad Shuhaimi and Zollner, Christian and Iza, Michael and DenBaars, Steven P. (2021) Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38 (3, SI). pp. 113-118. ISSN 1356-5362, DOI

Alias, Ezzah Azimah and Taib, Muhamad Ikram Md and Abu Bakar, Ahmad Shuhaimi and Egawa, Takashi and Kent, Anthony J. and Kamil, Wan Maryam Wan Ahmad and Zainal, Norzaini (2021) Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure. Journal of Physical Science, 32 (3). pp. 1-11. ISSN 1675-3402, DOI

Zainal, Norzaini and Samsudin, Muhammad Esmed Alif and Md Taib, Muhamad Ikram and Ahmad, Mohd Anas and Shuhaimi, Ahmad (2020) Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures, 148. p. 106722. ISSN 0749-6036, DOI

Md Taib, Muhamad Ikram and Samsudin, Muhammad Esmed Alif and Alias, Ezzah Azimah and Waheeda, S.N. and Ibrahim, Nurul Farhana and Shuhaimi, Ahmad and Zainal, Norzaini (2019) Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, 6 (8). 085906. ISSN 2053-1591, DOI

Azman, Adreen and Shuhaimi, Ahmad and Omar, Al-Zuhairi and Kamarundzaman, Anas and Abdul Khudus, Muhammad Imran Mustafa and Ariff, Azharul and Samsudin, M.E.A. and Zainal, Norzaini and Rahman, Saadah Abdul (2018) Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, 667. pp. 48-54. ISSN 0040-6090, DOI

Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Yusuf, Yusnizam and Li, Hongjian and Sulaiman, Abdullah Fadil and Alif Samsudin, Muhammad Esmed and Zainal, Norzaini and Abdul Khudus, Muhammad Imran Mustafa (2018) Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120. pp. 319-326. ISSN 0749-6036, DOI

This list was generated on Thu Jun 13 17:45:10 2024 +08.