 | Up a level |
Hisyam, Muhammad Iznul and Shuhaimi, Ahmad and Norhaniza, Rizuan and Mansor, Marwan and Williams, Adam and Hussin, Mohd Rofei Mat (2024) Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal-Organic Chemical Vapour Deposition. Crystals, 14 (4). p. 371. ISSN 2073-4352, DOI https://doi.org/10.3390/cryst14040371.
Hisyam, Muhammad Iznul and Norhaniza, Rizuan and Shuhaimi, Ahmad and Mansor, Marwan and Williams, Adam and Hussin, Mohd Rofei Mat (2023) Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on quality of MOCVD Grown GaN on Si(111) substrate. Surfaces and Interfaces, 40. ISSN 2468-0230, DOI https://doi.org/10.1016/j.surfin.2023.103041.
