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Tarek, Ahmad Hafiz Jafarul and Onik, Tahsin Ahmed Mozaffor and Lai, Chin Wei and Abd Razak, Bushroa and Lee, Hing Wah and Tan, Chee Keong and Azeem, Waqar and Wong, Yew Hoong (2024) Bilayer gate dielectric of ZrO2 and Ho2O3 on 4H-SiC substrate: structural and electrical characterization. Journal of Materials Science: Materials in Electronics, 35 (34). p. 2151. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-024-13919-0.
Odesanya, Kazeem Olabisi and Onik, Tahsin Ahmed Mozaffor and Ahmad, Roslina and Andriyana, Andri and Ramesh, S. and Tan, Chou Yong and Wong, Yew Hoong (2022) Physical and electrical characteristics of Ho2O3 thin film based on 4H-SiC wide bandgap semiconductor. Thin Solid Films, 741. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2021.138997.
Onik, Tahsin Ahmed Mozaffor and Hawari, Huzein Fahmi and Mohd Faizul, Mohd Sabri and Wong, Yew Hoong (2021) Enhancement of electrical performance of Ge-based metal-oxide-semiconductor capacitor via formation of trigonal-Sm2O3. Surfaces and Interfaces, 25. p. 101289. ISSN 24680230, DOI https://doi.org/10.1016/j.surfin.2021.101289.
Onik, Tahsin Ahmed Mozaffor and Hawari, Huzein Fahmi and Sabri, Mohd Faizul Mohd and Wong, Yew Hoong (2021) Formation and characterization of holmium oxide on germanium-based metal-oxide-semiconductor capacitor. International Journal of Energy Research, 45 (10). pp. 14761-14779. ISSN 0363-907X, DOI https://doi.org/10.1002/er.6752.
Onik, Tahsin Ahmed Mozaffor and Hawari, Huzein Fahmi and Sabri, Mohd Faizul Mohd and Wong, Yew Hoong (2021) Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation. Applied Surface Science, 544. ISSN 0169-4332, DOI https://doi.org/10.1016/j.apsusc.2021.148949.
