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Islam, N. and Baharin, M. S. N. S. and Rahim, A. F. A. and Khan, M. F. A. J. and Ghazali, N. A. and Bakar, A. S. A. and Mohamed, M. F. P. (2024) Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices. International Journal of Nanotechnology, 21 (4-5). ISSN 1475-7435, DOI https://doi.org/10.1504/IJNT.2024.141758.