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Azman, Zulkifli and Nayan, Nafarizal and Megat Hasnan, Megat Muhammad Ikhsan and Othman, Nurafiqah and Bakri, Anis Suhaili and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohamad Hafiz and Mohd Yusop, Mohd Zamri (2021) Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique. Microelectronics International, 38 (3, SI). pp. 86-92. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0013.
Bakri, Anis Suhaili and Nayan, Nafarizal and Soon, Chin Fhong and Ahmad, Mohd Khairul and Abu Bakar, Ahmad Shuhaimi and Abd Majid, Wan Haliza and Raship, Nur Amaliyana (2021) Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma. Microelectronics International, 38 (3). pp. 99-104. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0015.
Othman, Nur Afiqah and Nayan, Nafarizal and Mustafa, Mohd Kamarulzaki and Azman, Zulkifli and Megat Hasnan, Megat Muhammad Ikhsan and Bakri, Anis Suhaili and Jaffar, Siti Noryasmin and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohd Hafiz and Mohd Yusop, Mohd Zamri and Ahmad, Mohd Yazid (2021) Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique. In: 13th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2021, 2 - 4 August 2021, Virtual, Kuala Lumpur.
