 | Up a level |
Mahat, Mohamad Raqif and Talik, Noor Azrina and Abd Rahman, Mohd Nazri and Anuar, Mohd Afiq and Allif, Kamarul and Azman, Adreen and Nakajima, Hideki and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2020) Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106. p. 104757. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2019.104757.
Abd Rahman, Mohd Nazri and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Sulaiman, Abdullah Fadil and Allif, Kamarul and Zahir, Norhilmi Mohd and Shuhaimi, Ahmad (2019) Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm, 21 (12). pp. 2009-2017. ISSN 1466-8033, DOI https://doi.org/10.1039/C9CE00014C.
Rahman, Mohd Nazri Abd and Sulaiman, Abdullah Fadil and Abdul Khudus, Muhammad Imran Mustafa and Allif, Kamarul and Talik, Noor Azrina and Basri, Siti Hajar and Shuhaimi, Ahmad (2019) Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58 (SC). SC1037. ISSN 0021-4922, DOI https://doi.org/10.7567/1347-4065/ab09d3.
Sivanathan, P.C. and Shuhaimi, Ahmad and Hamza, Hebal and Kowsz, Stacy J. and Abdul Khudus, Muhammad Imran Mustafa and Li, Hong Jian and Allif, Kamarul (2018) Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD. Superlattices and Microstructures, 119. pp. 157-165. ISSN 0749-6036, DOI https://doi.org/10.1016/j.spmi.2018.04.040.
