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Abd Samad, Muhammad Izzuddin and Badrudin, Syazwani Izrah and Mansor, Marwan and Nayan, Nafarizal and Abu Bakar, Ahmad Shuhaimi and Yusop, Mohd Zamri and Latif, Rhonira (2025) Thin film sputter-deposition of AlN crystals in oxygenated chamber: a pilot study. Materials Research Express, 12 (1). 011501. ISSN 2053-1591, DOI https://doi.org/10.1088/2053-1591/ad9b70.
Tan, Gary and Abu Bakar, Ahmad Shuhaimi and Low, Hann Sen and Ooi, Chong Seng and Al-Zuhairi, Omar and Wong, Yew Hoong and Norhaniza, Rizuan and Abdul Rais, Shamsul Amir and Abd Majid, Wan Haliza (2024) The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11-22) InGaN/GaN Light Emitting Diode. Physica Status Solidi (B) – Basic Solid State Physics, 261 (11, SI). ISSN 0370-1972, DOI https://doi.org/10.1002/pssb.202300542.
Azmi, Nor Syafiqah and Mazlan, Muhammad Naim and Taib, Mohd Ikram Md and Ahmad, Mohd Anas and Samsuri, Mohd Shahrul Nizam and Mansor, Marwan and Hisyam, Muhammad Iznul and Abu Bakar, Ahmad Shuhaimi and Zainal, Norzaini (2024) Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate. Materials Science in Semiconductor Processing, 173. p. 108177. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2024.108177.
Abd Samad, Muhammad Izzuddin and Badrudin, Syazwani Izrah and Ponnuthurai, Darven Raj and Mansor, Marwan and Nayan, Nafarizal and Abu Bakar, Ahmad Shuhaimi and Latif, Rhonira (2024) Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride (100) thin film growth using ceramic target. Journal of Materials Research and Technology-JMR&T, 29. pp. 2248-2257. ISSN 2238-7854, DOI https://doi.org/10.1016/j.jmrt.2024.01.286.
Samad, Muhammad Izzuddin Abd and Badrudin, Syazwani Izrah and Ponnuthurai, Darven Raj and Mansor, Marwan and Nayan, Nafarizal and Abu Bakar, Ahmad Shuhaimi and Latif, Rhonira (2024) Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target. Journal of Materials Research and Technology-JMR&T, 29. pp. 2248-2257. ISSN 2238-7854, DOI https://doi.org/10.1016/j.jmrt.2024.01.286.
Abd Samad, Muhammad Izzuddin and Noor, Mimiwaty Mohd and Nayan, Nafarizal and Abu Bakar, Ahmad Shuhaimi and Mansor, Marwan and Zuhdi, Ahmad Wafi Mahmood and Hamzah, Azrul Azlan and Latif, Rhonira (2023) Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films. Scripta Materialia, 226. ISSN 1359-6462, DOI https://doi.org/10.1016/j.scriptamat.2022.115228.
Samad, M.I.A. and Nayan, N. and Abu Bakar, Ahmad Shuhaimi and Wageh, A.H. and Hamzah, A.A. and Latif, R. (2022) Aluminium thin film surface modification via low-pressure and atmospheric-pressure argon plasma exposure. Journal of Surface Investigation, 16 (3). 421 -426. ISSN 1027-4510, DOI https://doi.org/10.1134/S1027451022030387.
Al-Zuhairi, Omar and Anuar, Afiq and Makinudin, Abdullah Haaziq Ahmad and Abu Bakar, Ahmad Shuhaimi and Azlan, M. N. and Supangat, Azzuliani (2022) Magnesium doped semipolar (11-22) p-type gallium nitride: Impact of dopant concentration variants towards grain size distributions and crystalline quality. Thin Solid Films, 741. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2021.139003.
Samsudin, Muhammad Esmed Alif and Yusuf, Yusnizam and Zainal, Norzaini and Abu Bakar, Ahmad Shuhaimi and Zollner, Christian and Iza, Michael and DenBaars, Steven P. (2021) Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38 (3, SI). pp. 113-118. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0012.
Azman, Zulkifli and Nayan, Nafarizal and Megat Hasnan, Megat Muhammad Ikhsan and Othman, Nurafiqah and Bakri, Anis Suhaili and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohamad Hafiz and Mohd Yusop, Mohd Zamri (2021) Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique. Microelectronics International, 38 (3, SI). pp. 86-92. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0013.
Bakri, Anis Suhaili and Nayan, Nafarizal and Soon, Chin Fhong and Ahmad, Mohd Khairul and Abu Bakar, Ahmad Shuhaimi and Abd Majid, Wan Haliza and Raship, Nur Amaliyana (2021) Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma. Microelectronics International, 38 (3). pp. 99-104. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0015.
Azman, Adreen and Kamarundzaman, Anas and Abu Bakar, Ahmad Shuhaimi and Abd Majid, Wan Haliza (2021) The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing, 131. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2021.105836.
Othman, Nur Afiqah and Nayan, Nafarizal and Mustafa, Mohd Kamarulzaki and Azman, Zulkifli and Megat Hasnan, Megat Muhammad Ikhsan and Bakri, Anis Suhaili and Jaffar, Siti Noryasmin and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohd Hafiz and Mohd Yusop, Mohd Zamri and Ahmad, Mohd Yazid (2021) Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique. In: 13th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2021, 2 - 4 August 2021, Virtual, Kuala Lumpur.
Kamarundzaman, Anas and Abu Bakar, Ahmad Shuhaimi and Azman, Adreen and Omar, Al-Zuhairi and Talik Sisin, Noor Azrina and Supangat, Azzuliani and Abd Majid, Wan Haliza (2021) Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN. Scientific Reports, 11 (1). ISSN 2045-2322, DOI https://doi.org/10.1038/s41598-021-89201-8.
Rais, Shamsul Amir Abdul and Hassan, Zainuriah and Abu Bakar, Ahmad Shuhaimi and Abd Rahman, Mohd Nazri and Yusuf, Yusnizam and Taib, Muhamad Ikram Md and Sulaiman, Abdullah Fadil and Hussin, Hayatun Najiha and Ahmad, Mohd Fairus and Norizan, Mohd Natashah and Nagai, Keiji and Akimoto, Yuka and Shoji, Dai (2021) Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11 (3). pp. 926-935. ISSN 2159-3930, DOI https://doi.org/10.1364/OME.413417.
Alias, Ezzah Azimah and Taib, Muhamad Ikram Md and Abu Bakar, Ahmad Shuhaimi and Egawa, Takashi and Kent, Anthony J. and Kamil, Wan Maryam Wan Ahmad and Zainal, Norzaini (2021) Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure. Journal of Physical Science, 32 (3). pp. 1-11. ISSN 1675-3402, DOI https://doi.org/10.21315/jps2021.32.3.1.
Azhar, N.E.A. and Mamat, M.H. and Abu Bakar, Ahmad Shuhaimi and Shariffudin, S.S. and Rusop, M. (2021) Synthesis of Anatase Titanium Dioxide Nanotube Arrays via Electrochemical Anodization. Lecture Notes in Mechanical Engineering, 46. pp. 677-685. ISSN 21954356, DOI https://doi.org/10.1007/978-981-15-9505-9_61.
Anuar, Afiq and Makinudin, Abdullah Haaziq Ahmad and Al-Zuhairi, Omar and Abu Bakar, Ahmad Shuhaimi and Supangat, Azzuliani (2020) Crystal quality and surface structure tuning of semi-polar (11-22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films, 697. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2020.137817.
