Direct synthesis of β-silicon carbide nanowires from graphite only without a catalyst

Al-Ruqeishi, Majid S. and Nor, Roslan Md and Amin, Yusoff Mohd and Al-Azri, Khalifa (2010) Direct synthesis of β-silicon carbide nanowires from graphite only without a catalyst. Journal of Alloys and Compounds, 497 (1-2). pp. 272-277. ISSN 0925-8388, DOI

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One-dimensional (1D) β-SiC nanowires were successfully fabricated on bare Si (1 0 0) substrate using simple carbo-thermal evaporation of graphite at 1200 °C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 and 500 nm. The majority of crystal planes were β-SiC (1 1 1) with other less intensity of (2 0 0), (2 2 0) and (3 1 1). The silicon substrate location inside the furnace found to be critical in the formation of the β-SiC nanowires. Also, introducing oxygen gas as an ambient gas instead of argon reduces the growth at locations close to the graphite source.

Item Type: Article
Funders: Institute of Research Management and Consultancy, University Malaya, under grant no. PS2007/118B
Uncontrolled Keywords: β-SiC Carbo-thermal; Nanowires Ambient gas; Crystal planes; Direct synthesis Oxygen gas; Silicon carbide nanowires; Silicon substrates Argon; Graphite; Location Oxygen; Silicon carbide; Thermal evaporation
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: miss munirah saadom
Date Deposited: 10 Jul 2013 03:16
Last Modified: 28 Aug 2019 03:44

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