High step-up flyback with low-overshoot voltage stress on secondary GaN rectifier

Za'im, Radin and Jamaludin, Jafferi and Yusof, Yushaizad and Abd Rahim, Nasrudin (2022) High step-up flyback with low-overshoot voltage stress on secondary GaN rectifier. Energies, 15 (14). ISSN 1996-1073, DOI https://doi.org/10.3390/en15145092.

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This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

Item Type: Article
Funders: UMPEDAC-2020 (MOHE HICOE-UMPEDAC), Ministry of Education Malaysia (Grant No: IF006-2021 & RU002-2021)
Uncontrolled Keywords: High gain converter; High step-up; flyback; Gallium nitride; GaN; Silicon carbide; SiC; Rectifier; Voltage stress; Leakage
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Deputy Vice Chancellor (Research & Innovation) Office > UM Power Energy Dedicated Advanced Centre
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 27 Oct 2023 04:16
Last Modified: 27 Oct 2023 04:16
URI: http://eprints.um.edu.my/id/eprint/41680

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