Review-gate oxide thin films based on silicon carbide

Odesanya, Kazeem Olabisi and Ahmad, Roslina and Andriyana, Andri and Bingol, Sedat and Wong, Yew Hoong (2022) Review-gate oxide thin films based on silicon carbide. ECS Journal of Solid State Science and Technology, 11 (8). ISSN 2162-8769, DOI

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented in this report. The SiC material, which is mostly employed as base component in metal oxide semiconductor field effect transistors (MOSFETs) is very promising; for its high voltage, high power, high temperature and high breakdown field properties. These features have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs. It also identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiO2/SiC system. Reliability as a significant aspect of electronic structures was also discussed with much emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

Item Type: Article
Funders: Ministry of Higher Education (MOHE), Malaysia via Fundamental Research Grant Scheme (Grant No: FP049-2020), Universiti Malaya via Impact-oriented Interdisciplinary Research Grant Programme (Grant No: IIRG018B-2019), Southeast Asia-Taiwan Universities (SATU) Joint Research Scheme (Grant No: ST016-2020)
Uncontrolled Keywords: Perceived stress scale; Physical-activity; Malay version; Risk; Reliability; Increases; Stroke; Health; Adults Atomic-layer deposition; Electrical-properties; Wide bandgap; Vapor-deposition; 4h-SiC mosfets; Mos capacitors; Temperature; Power; Oxidation; SiO2
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering > Department of Mechanical Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 08 Nov 2023 09:06
Last Modified: 08 Nov 2023 09:06

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