Enhancing the electrical properties of vertical OFETs using a P(VDF-TrFE) dielectric layer

Aziz, Fakhra and Anuar, Afiq and Ahmad, Zubair and Roslan, Nur Adilah and Makinudin, Abdullah Haaziq Ahmad and Bawazeer, Tahani M. and Alsenany, Nourah and Alsoufi, Mohammad S. and Supangat, Azzuliani (2020) Enhancing the electrical properties of vertical OFETs using a P(VDF-TrFE) dielectric layer. Journal of Electronic Materials, 49 (2). pp. 1362-1371. ISSN 0361-5235, DOI https://doi.org/10.1007/s11664-019-07805-3.

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This work reports on the performance of vertical organic field effect transistors (VOFETs) fabricated using two dissimilar dielectric materials, namely poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(vinylidene fluoride) (PVDF). A comparison of the devices shows that integrating P(VDF-TrFE) enables the VOFET to exhibit significantly higher current of 0.10 mA with mobility of 6.874 x 10(-4) m(2) V-1 s(-1) as compared with PVDF, which has a current of 0.034 mA and mobility equal to 4.24 x 10(-5) m(2) V-1 s(-1). VOFET fabricated with a P(VDF-TrFE) dielectric layer shows a high current, high mobility, substantial ON/OFF ratio and low threshold voltage. The obtained results demonstrate that the VOFET fabricated with P(VDF-TrFE) dielectric layer allows smooth current flow between electrodes and appreciably improves the device characteristics.

Item Type: Article
Funders: Universiti Malaya (FG041-17AFR), Ministry of Education, Malaysia (FP078-2018A)
Uncontrolled Keywords: Organic field effect transistor; Vertical OFET; Lateral OFET; P(VDF-TrFE)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms Zaharah Ramly
Date Deposited: 09 Mar 2023 07:14
Last Modified: 09 Mar 2023 07:14
URI: http://eprints.um.edu.my/id/eprint/37233

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