Effects of background gases and pressure in pulsed laser deposition of Al-doped ZnO

Kek, Reeson and Yap, Seong Ling and Koh, Song Foo and Nee, Chen Hon and Tou, Teck Yong and Yap, Seong Shan (2020) Effects of background gases and pressure in pulsed laser deposition of Al-doped ZnO. Thin Solid Films, 701. ISSN 0040-6090,

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Background gases (O-2, He or Ar) with the pressure from similar to 10(-3) Pa to 133.3 Pa are used in 355 nm laser deposition of Al-doped ZnO at room temperature. The effects of these gases and pressure on plasma formation are studied by optical emission spectroscopy (OES) and time of flight (TOF) measurement. The OES results show that the emission intensity of the species in O-2 and Ar decrease slightly and then increase exponentially above similar to 5 Pa. The emission intensity in Ar is the highest, followed by emission in O-2 whilst the emission in He is low and weakly depend on background gas pressure. TOF measurements indicate that the ion velocity decrease with increasing O-2 and Ar pressure at about 5-10 Pa. The ion velocity is highest in He while the ion velocities in O-2 and Ar are similar. Thin-film samples deposited in different gas at 2.6 Pa are amorphous, but those deposited at 133.3 Pa are crystalline and exhibit different morphologies and optical properties depending on type of gas. Samples deposited in O-2 are highly transparent but those deposited in He and Ar contain nano and micron-sized structures with <50% transmittance. In addition, Zn crystallites are detected by X-ray diffraction.

Item Type: Article
Uncontrolled Keywords: Pulsed laser deposition; Laser produced plasma; Background gases; Pressure; Aluminum-doped zinc oxide, Nanostructured films
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science
Faculty of Science > Department of Physics
Depositing User: Ms Zaharah Ramly
Date Deposited: 31 Dec 2023 03:43
Last Modified: 31 Dec 2023 03:43
URI: http://eprints.um.edu.my/id/eprint/36723

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