Cu2O/InGaN heterojunction thin films with enhanced photoelectrochemical activity for solar water splitting

Alizadeh, Mahdi and Goh, Boon Tong and Qadir, Karwan Wasman and Mehmood, Muhammad Shahid and Rasuli, Reza (2020) Cu2O/InGaN heterojunction thin films with enhanced photoelectrochemical activity for solar water splitting. Renewable Energy, 156. pp. 602-609. ISSN 09601481, DOI

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We study Cu2O/InGaN heterojunction thin films with different thicknesses of Cu2O layer as a photoanode in photoelectrochemical (PEC) water splitting cell. Results show that the bandgap energy of Cu2O/InGaN heterojunction thin films is 2.60-2.72 eV and, according to Vegard's law, the indium content of the InGaN thin film is 22%. Electrochemical impedance spectroscopy shows the charge-transfer resistance value of about 0.4 k Omega for the optimized sample revealing enhanced charge separation and transfer at the interface. A maximum photocurrent density of 0.16 mA cm(-2 )at 0.5 V vs. Ag/AgCl was obtained for the Cu2O/InGaN heterojunction thin films with an overall thickness of 250 nm. The obtained value is 4.2 and 3.2 times higher than that of pure InGaN and Cu2O thin films photoanodes, respectively. We showed charge separation mechanism in the Cu2O/InGaN heterojunction photoelectrodes. According to our model, gradient energy bandgap reduce the recombination rate of photo-induced electron-hole pairs, and significantly enhance the PEC performance. (C) 2020 Elsevier Ltd. All rights reserved.

Item Type: Article
Funders: Iranian National Science Foundation, University of Minnesota, ran National Science Foundation, Universiti Malaya (Grant No. GPF034B-2018)
Uncontrolled Keywords: Cu2O/InGaN heterojunction; Photoelectrochemical behavior; Solar water splitting; Thin films
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms Zaharah Ramly
Date Deposited: 30 Dec 2023 15:23
Last Modified: 30 Dec 2023 15:23

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