Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Zahir, Norhilmi and Talik Sisin, Noor Azrina and Harun, Hazmi Naim and Kamarundzaman, Anas and Tunmee, Sarayut and Nakajima, Hideki and Chanlek, Narong and Shuhaimi, Ahmad and Majid, Wan Haliza Abd (2021) Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, 540 (2). ISSN 0169-4332, DOI

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Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 degrees C to 550 degrees C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperature during deposition. The substrate temperature of 450 degrees C produces the best ITO/p-GaN properties for the InGaN/GaN Light Emitting Diode performance, which outperforms the 550 degrees C device, although the latter exhibits better optical characteristics. At 100 mA, the 450 degrees C LED exhibits the highest power efficiency of 9.32 mW with an operation voltage of 6.96 V. Xray Photoemission Spectroscopy measurement shows that substitution of Sn4+ occurs inside the In2O3 structure, which reaches its limit at the 450 degrees C substrate temperature. This result manifests the crucial role of the surface chemistry effect on the current injection into the LED. Additionally, the band offset of ITO/p-GaN interface data shows that the interface of the 450 degrees C sample exhibits the highest conduction band offset of 1.93 eV. For the metal/ITO junction, the 450 degrees C sample experiences the lowest Conduction Band Maximum of 0.69 eV, which ultimately helps to enhance the carrier injection from the anode part in the device.

Item Type: Article
Funders: Long Research Grant Scheme (LRGS) "Wide Band Gap Semiconductor" from Malaysia Ministry of Education (MOE)[LR001A-2016A]
Uncontrolled Keywords: ITO;Substrate temperature;Electron beam;Interface;InGaN;GaN; Light Emitting Diode
Subjects: Q Science > QC Physics
Divisions: Faculty of Science
Depositing User: Ms Zaharah Ramly
Date Deposited: 16 Jun 2022 01:47
Last Modified: 16 Jun 2022 01:47

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