Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation

Onik, Tahsin Ahmed Mozaffor and Hawari, Huzein Fahmi and Sabri, Mohd Faizul Mohd and Wong, Yew Hoong (2021) Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation. Applied Surface Science, 544. ISSN 0169-4332, DOI

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A systematic study of chemical, structural and electrical properties of Sm2O3 gate stack has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal oxidation and nitridation at different temperatures, i.e. 300 degrees C-600 degrees C in N2O ambient. The crystallinity and phase identification were investigated using X-ray diffraction (XRD) analysis. The crystallite size and micro-strain were approximated using Williamson-Hall plot. Chemical composition and interfacial bonding state have been identified by X-ray photoelectron spectroscopy analysis. High-resolution transmission electron microscopy was performed to investigate the cross-sectional morphology and thickness estimation of Sm2O3/IL/Ge. Presence of amorphous Sm2O3 film layer with an amorphous interfacial layer comprising GeO2, Ge3N4 and Sm-O-Ge were identified. Band alignment of Sm2O3 gate stack was estimated from X-ray photoelectron spectroscopy with a conduction band offset of Delta E-c = 2.87 eV and valance band offset Delta E-v = 2.98 eV; exhibited a high electrical breakdown of 13.31 MVcm(-1) at leakage current density, 10(-)(6) A/cm(2). Through the correlation of findings, possible growth mechanism of Sm2O3 has been suggested. This type of oxide could be served as gate dielectric in Ge MOS-based devices.

Item Type: Article
Uncontrolled Keywords: Sm2O3 high-k dielectric; Germanium; Thermal oxidation and nitridation; Band alignment and leakage current density
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 07 Mar 2022 08:16
Last Modified: 07 Mar 2022 08:16

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