Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Zahir, Norhilmi Mohd and Talik, Noor Azrina and Harun, Hazmi Naim and Kamarundzaman, Anas and Tunmee, Sarayut and Nakajima, Hideki and Chanlek, Narong and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2021) Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, 540. p. 148406. ISSN 0169-4332, DOI

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Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 °C to 550 °C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperature during deposition. The substrate temperature of 450 °C produces the best ITO/p-GaN properties for the InGaN/GaN Light Emitting Diode performance, which outperforms the 550 °C device, although the latter exhibits better optical characteristics. At 100 mA, the 450 °C LED exhibits the highest power efficiency of 9.32 mW with an operation voltage of 6.96 V. X-ray Photoemission Spectroscopy measurement shows that substitution of Sn4+ occurs inside the In2O3 structure, which reaches its limit at the 450 °C substrate temperature. This result manifests the crucial role of the surface chemistry effect on the current injection into the LED. Additionally, the band offset of ITO/p-GaN interface data shows that the interface of the 450 °C sample exhibits the highest conduction band offset of 1.93 eV. For the metal/ITO junction, the 450 °C sample experiences the lowest Conduction Band Maximum of 0.69 eV, which ultimately helps to enhance the carrier injection from the anode part in the device. © 2020 Elsevier B.V.

Item Type: Article
Funders: Long Research Grant Scheme (LRGS) “Wide Band Gap Semiconductor”, grant no. LR001A-2016A from Malaysia Ministry of Education (MOE)
Uncontrolled Keywords: ITO; Substrate temperature; Electron beam; Interface; InGaN/GaN; Light Emitting Diode
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 28 Apr 2021 01:23
Last Modified: 28 Apr 2021 01:23

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