Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector

Ahmad, Harith and Rashid, Haroon and Ismail, Mohammad Faizal (2019) Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector. Optik, 198. p. 163237. ISSN 0030-4026, DOI

Full text not available from this repository.
Official URL:


Molybdenum disulphide (MoS2), a member of the transition metal dichalcogenides family has shown excellent optoelectronic properties with direct or indirect bandgaps in visible range as well as good absorption in its 2-dimensional (2D) form. In this work, a polycrystalline MoS2 thin film is fabricated by radio frequency magnetron sputtering. X-ray diffraction (XRD) analysis of the fabricated sample reveals two hexagonal structured peaks along the (100) and (110) planes, while energy-dispersive X-ray (EDX) spectroscopy confirms a non-stoichiometric MoS2 film with a thickness of 300 nm. Raman shifts are observed at the E1 2g and A1g phonon modes, located at 374.37 cm−1 and 407.75 cm−1 respectively. A sandwiched heterojunction photodetector with a SLG/n-MoS2/p-Si structure is fabricated and illuminated with violet light at 441 nm. The device exhibits significant optoelectronic properties at various laser powers at a 10 V bias voltage. The maximum value of the photocurrent is calculated as 0.79 μA, with the responsivity as 10.4 mAW−1 and detectivity of 6.74 × 109 Jones at an intensity of 0.004 mW/cm2. These results highlight the adaptability of the current technique that will help realize large-scale production as well as allow for the development of advanced optoelectronic devices. © 2019 Elsevier GmbH

Item Type: Article
Funders: Ministry of Higher Education, Malaysia under the Grants LRGS (2015) NGOD/UM/KPT, GA 010-2014 (ULUNG), University of Malaya under the Grants RU 013-2018, HiCoE Phase II Funding
Uncontrolled Keywords: MoS2; RF sputtering; Thin films; Raman; Photodetectors
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Deputy Vice Chancellor (Research & Innovation) Office > Photonics Research Centre
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 19 May 2020 01:10
Last Modified: 19 May 2020 01:10

Actions (login required)

View Item View Item