In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow

Najwa, S. and Shuhaimi, Ahmad and Talik, Noor Azrina and Ameera, N. and Sobri, M. and Rusop, Mohamad (2019) In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science, 479. pp. 1220-1225. ISSN 0169-4332, DOI

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In this work, we report that the properties of Sn-doped In 2 O 3 (ITO) can be properly tuned by varying Argon/ Oxygen (Ar/O 2 ) percentage during the sputtering process from 7% O 2 to 93% O 2 . The characteristics of the ITO grown in oxygen deficient to the oxygen-rich condition are properly studied. It is found that there is a strong correlation between the concentration incorporation of oxygen with the properties of ITO films. ITO films were grown in oxygen deficient condition (7% O 2 ) resulted in a rougher surface, wider band gap, and lower resistivity compared to the other films grown with 33%, 67%, and 93%. Blue shifts in absorbance edge and band gap widening indicate that the number of carrier concentration was also changed linearly with the presence of oxygen in the film. These findings provide a simple way to effectively tune the properties of ITO films for ITO to be applied in optoelectronics, power device as well as sensor applications. © 2019 Elsevier B.V.

Item Type: Article
Funders: Long-term Research Grant Scheme ( LR001A-2016A ) from Malaysia Ministry of Higher Education (MOE)
Uncontrolled Keywords: Transparent conducting oxide; Oxygen vacancies; Oxygen flow percentage
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 28 Feb 2020 01:08
Last Modified: 28 Feb 2020 01:08

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