Nanosecond pulse generation with a gallium nitride saturable absorber

Samsamnun, Farina Saffa Mohamad and Zulkipli, Nur Farhanah and Abdul Khudus, Muhammad Imran Mustafa and Shuhaimi, Ahmad and Abdul Majid, Wan Haliza and Harun, Sulaiman Wadi (2019) Nanosecond pulse generation with a gallium nitride saturable absorber. OSA Continuum, 2 (1). pp. 134-141. ISSN 2578-7519, DOI

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A mode-locked nanosecond Erbium-doped fiber laser (EDFL) was demonstrated using gallium nitrate (GaN) in the form of a polished crystal as a saturable absorber (SA). The GaN film exhibited a modulation depth of 2% with a saturable optical intensity of 0.46 MW/cm2. The laser directly produced nanosecond pulses with stable mode-locking operation at a pump threshold of 149.51 mW. The generated output pulses operated at a 1562 nm central wavelength with a pulse duration and a repetition rate of 485 ns and 967 kHz, respectively. The average output power was 3.068 mW at a pump power of 182.34 mW, corresponding to 3.1 nJ single pulse energy. These results indicate that GaN material has a promising application in ultrafast light generation. © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

Item Type: Article
Funders: Ministry of Education (Grant No: LR001A-2016A), University of Malaya (Grant No: RP039C-18AFR)
Uncontrolled Keywords: Fiber lasers; Gallium nitride; III-V semiconductors; Locks (fasteners); Mode-locked fiber lasers; Optical pumping; Pulse repetition rate
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Deputy Vice Chancellor (Research & Innovation) Office > Photonics Research Centre
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 22 Jan 2020 03:41
Last Modified: 22 Jan 2020 03:41

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