Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

Zhao, Feng and Amnuayphol, Oliver and Cheong, Kuan Yew and Wong, Yew Hoong and Jiang, Jheng-Yi and Huang, Chih-Fang (2019) Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC. Materials Letters, 245. pp. 174-177. ISSN 0167-577X, DOI

Full text not available from this repository.
Official URL:


In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better exploits the high breakdown strength of 4H-SiC in its MOSFET devices. The Y 2 O 3 /Al 2 O 3 stacking films were deposited using RF magnetron sputtering, with PDA in Ar ambient at 400 °C, 600 °C, 800 °C and 1000 °C. X-ray diffraction (XRD) and angle resolved X-ray photoelectron spectroscopy (XPS) results show that an Al 5 O 12 Y 3 crystal layer was formed in between Y 2 O 3 and Al 2 O 3 films after annealing above 600 °C. High resolution transmission electron microscope (HRTEM) was used to investigate the atomic structure and measure the thickness of each layer. Charges and dielectric strength of the stacking films were characterized by high frequency capacitance-voltage (C-V) and current-voltage (I-V) measurements. The lower charge density and higher dielectric strength were found after PDA at 800 °C and 1000 °C.

Item Type: Article
Uncontrolled Keywords: Y2O3/Al2O3 stacking dielectric; Post-deposition anneal; XRD; XPS; HRTEM
Subjects: T Technology > TJ Mechanical engineering and machinery
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 01 Nov 2019 01:33
Last Modified: 01 Nov 2019 01:33

Actions (login required)

View Item View Item