Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Yusuf, Yusnizam and Li, Hongjian and Sulaiman, Abdullah Fadil and Alif Samsudin, Muhammad Esmed and Zainal, Norzaini and Abdul Khudus, Muhammad Imran Mustafa (2018) Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120. pp. 319-326. ISSN 0749-6036, DOI

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A high-quality aluminium nitride buffer layers were grown on (0 0 0 1) sapphire substrate at standard pressure with a subsequent low growth temperature via metal organic chemical vapour deposition. The preparation of aluminium nitride buffer layers was accomplished by growing a thin aluminium nitride nucleation layer through a nominal growth condition followed by depositing a thick aluminium nitride film using pulsed atomic-layer epitaxy technique. In 13.3 kPa ambient, the influence of aluminium nitride nucleation layer on the crystal quality of the aluminium nitride film atop was studied by varying the nucleation layer growth temperature at 700, 800, 900, 1000 and 1100 °C, respectively. It was observed that the growth temperature of nucleation layer substantially affected the structural properties of the top aluminium nitride film where the lowest value for symmetric (0 0 0 2) and asymmetric (1 0–1 2) x-ray rocking curve analysis were achieved at 1100 °C, indicating the reduction of dislocation density in the aluminium nitride films. In line with that, this result was sustained by the root mean square surface roughness evaluated via atomic force microscopy. Moreover, an atomically-flat crack-free aluminium nitride buffer layer was demonstrated by field emission scanning electron microscopy measurement.

Item Type: Article
Funders: OSRAM Opto Semiconductor SDN BHD: the sponsorship studies under PV020-2017, Ministry of Higher Education (MOHE) Long Term Research Grant Scheme (LRGS) under project no: LR001A-2016A, CREST Gallium Nitride on Gallium Nitride Collaboration (PV015-2015)
Uncontrolled Keywords: Aluminium nitride; Nucleation layer; Standard pressure deposition; Pulsed atomic-layer epitaxy; MOCVD
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 14 Oct 2019 09:17
Last Modified: 14 Oct 2019 09:17

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