Highly efficient short length Bismuth-based erbium-doped fiber amplifier

Cheng, Xiau S. and Hamida, Belal Ahmed and Arof, Hamzah and Ahmad, Harith and Harun, Sulaiman Wadi (2011) Highly efficient short length Bismuth-based erbium-doped fiber amplifier. Laser Physics, 21 (10). pp. 1793-1796. ISSN 1054-660X, DOI https://doi.org/10.1134/S1054660X11170038.

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Official URL: https://doi.org/10.1134/S1054660X11170038


An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to conventional silica-based erbium-doped fiber amplifiers (Si-EDFAs) with the same amount of Erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a flat-gain of around 23 dB with gain variation of ±3.5 dB within the wavelength region from 1530 to 1565 nm at the maximum pump power of 150 mW. The corresponding noise figures are obtained at an average of 6 dB.

Item Type: Article
Uncontrolled Keywords: Amplifiers (electronic); Bismuth; Erbium; Silica
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 02 Jan 2019 03:40
Last Modified: 08 Apr 2019 06:25
URI: http://eprints.um.edu.my/id/eprint/19871

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