An efficient and flat-gain Erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm

Harun, Sulaiman Wadi and Paul, Mukul Chandra and Pal, Mrinmay and Dhar, Anirban and Sen, Ranjan and Das, S. and Bhadra, Shyamal Kumar and Shahabuddin, Nurul Shahrizan and Ahmad, Harith (2008) An efficient and flat-gain Erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm. Optoelectronics and Advanced Materials-Rapid Communications, 2 (8). pp. 455-458. ISSN 1842-6573,

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A flat gain erbium-doped fiber amplifier (EDFA) operating in the 1550 nm to 1590 nm region is demonstrated. The EDFA uses only a15m EDF as opposed to a standard L-band EDFA which requires significantly longer EDF lengths. The EDF is fabricated using a Modified Chemical Vapor Deposition process in conjunction with a solution doping technique. The NA, cut-off wavelength and erbium ion concentration of the fiber are obtained at 0.15, 998 nm and 900 ppm respectively. The gain of the EDFA is flattened to a level of about 12 dB with a gain variation of less than 3 dB over a range from 1550 to 1590 nm with a 1480nm pump at 90mW. This amplifier operates on the energy transfer of the quasi-two-level system, whereby the C-band energy acts as a pump for the population inversion required for gain at the longer wavelength. The noise figure at the flat gain region varies from 6 to 8.5 dB.

Item Type: Article
Uncontrolled Keywords: Erbium-doped fiber amplifier; Flat-gain EDFA; High concentration EDF; L-band EDFA
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 28 Nov 2018 04:58
Last Modified: 28 Nov 2018 04:58

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